Solidigm, the US subsidiary of SK Hynix, is considering a NAND flash memory factory in the United States. Sources cited by Reuters name upstate New York among the leading options. There is no investment announcement, signed site or construction timetable.

SK Hynix said the unit is “reviewing various options to strengthen competitiveness” but that no specific plans have been confirmed. Any such project would be separate from reported talks with Intel about production in Ohio — talks the group described on 16 September as unconfirmed.

Solidigm’s NAND output is today concentrated in Dalian, China. A US plant would cut reliance on a single site and could ease exposure to tariffs and export controls. US costs are higher and need incentives, staff and infrastructure.

Storage demand is rising with data centres and artificial-intelligence applications. That does not turn an internal review into an open construction site.

Value, capacity and location should not be treated as facts until an official statement and approvals. This article uses “considering”, not “building”.

The picture shows chips or an existing semiconductor site, not the future New York factory — that factory has not been decided.

Solidigm is headquartered in the United States; the industrial decision remains with the group and regulators, not with a headline.

Image: SanDisk CompactFlash board with NAND chips / Wikimedia Commons (Mister rf, CC BY-SA 4.0). Existing memory, not the future New York factory. Cropped to 16:9.

Source consulted: Reuters — SK Hynix’s Solidigm unit is weighing NAND memory chip factory in US; Solidigm.